Fabrication of Schottky-Barrier Diodes Using a Thick Film Technique

Characterization of graphene-silicon Schottky barrier diodes using impedance spectroscopy

Articles you may be interested in Schottky barrier inhomogeneity for graphene/Si-nanowire arrays/n-type Si Schottky diodes Appl.

Influence of interface inhomogeneities in thin-film Schottky diodes

The scalability of thin-film transistors has been well documented, but there have been very few investigations into of the effects of device scalability in Schottky diodes. Indium-gallium-zinc-oxide (IGZO) Schottky diodes were fabricated with IGZO thicknesses of 50, 150 and 250 nm. Despite the same IGZO-Pt interface and Schottky barrier being formed in all devices, reducing the IGZO thickness c...

AlGaN/GaN Schottky Barrier Diodes Employing Diamond-like Carbon passivation

AlGaN/GaN Schottky Barrier Diodes (SBDs) employing the Diamond-like Carbon (DLC) passivation was proposed. The reverse blocking characteristics of the AlGaN/GaN SBD is degraded by the electron trapping effect through the surface trap states. In order to suppress the electron trapping effect and increase the breakdown voltage of AlGaN/GaN SBDs, the surface passivation or treatment should be perf...

Defect Analysis of Barrier Height Inhomogeneity in Titanium 4H-SiC Schottky Barrier Diodes

Graphene-silicon Schottky diodes.

We have fabricated graphene-silicon Schottky diodes by depositing mechanically exfoliated graphene on top of silicon substrates. The resulting current-voltage characteristics exhibit rectifying diode behavior with a barrier energy of 0.41 eV on n-type silicon and 0.45 eV on p-type silicon at the room temperature. The I-V characteristics measured at 100, 300, and 400 K indicate that temperature ...